Datasheet > 2SB772S

2SB772S

更新时间： 2024-10-15 18:09:59

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页数	文件大小	规格书
2页	385K
描述
PNP Transistor

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中文翻译

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数据手册

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2SB772S 数据手册

SMD Type

Transistors

PNP Transistor

2SB772S

■Features

● PNP transistor High current output up to 3A

● Low Saturation Voltage

● Complement to 2SD882S

1.70 0.1

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■Absolute Maximum Ratings Ta = 25℃

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current to Continuous

Collector Dissipation

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-40

Unit

-30

-6

-3

P^c

0.5

℃

Junction Temperature

T^J

150

Storage Temperature

T^stg

-55 to 150

■Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-40

-30

-6

Typ Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V^CBO

V^CEO

V^EBO

I^CBO

Ic=-100uA ,IE=0

IC= -10 mA , IB=0

IE= -100 uA ,IC=0

VCB=-40 V , IE=0

VEB=-6V , IC=0

-1

μA

Emitter cut-off current

I^EBO

V^CE= -2V, IC= -1A

V^CE=-2V, IC= -100mA

IC=-2A, IB=- 0.2A

IC=-2A, IB= -0.2A

400

DC current gain

h^FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V^CE(sat)

V^BE(sat)

f _T

-0.5

-1.5

VCE=-5 V, IC=-0.1mA,f = 10MHz

MHz

■Classification of hfe(1)

Type

Range

Marking

2SB772S-R

60-120

2SB772S-Q

100-200

772SQ

2SB772S-P

160-320

772SP

2SB772S-E

200-400

772SE

772SR

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