Datasheet > 2SB772R-G

2SB772R-G

更新时间： 2024-02-15 06:25:30

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描述
Transistor

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2SB772R-G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84

2SB772R-G 数据手册

2SB772

2SD882

PNP/NPN Epitaxial Planar Transistors

TO-126

* “G” Lead(Pb)-Free

1. EMITTER

2.COLLECTOR

3.BASE

ABSOLUTE MAXIMUM RATINGS

(Ta=25 C)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base VOltage

Collector Current (DC)

Symbol

PNP/2SB772

-30

Unit

Vdc

Adc

NPN/2SD882

5.0

3.0

CEO

-40

-5.0

-3.0

CBO

EBO

C(DC)

Collector Current (Pulse)⁽¹⁾

(Pulse)

-7.0

-0.6

Adc

7.0

0.6

(Pulse)

Base Current

Total Device Disspation T =25 C

1.0

Total Device Dissipation Tc=25 C

Junction Temperature

150

Storage, Temperature

Tstg

-55 to +150

Device Marking

2SB772=B772 , 2SD882=D882

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage (I = -10/10 mAdc, I =0)

-30/30

Vdc

(BR)CEO

-40/40

Vdc

Collector-Base Breakdown Voltage (I = -100/100 µAdc, I =0)

(BR)CBO

Vdc

-5.0/5.0

Emitter-Base Breakdown Voltage (I = -100/100 µAdc, I =0)

(BR)EBO

uAdc

CE0

-1.0/1.0

Collector Cutoff Current (V = -30/30 Vdc, I =0)

uAdc

Collector Cutoff Current (V = -40/40 Vdc, I =0)

CBO

EBO

-1.0/1.0 uAdc

Emitter Cutoff Current (V = -6.0/6.0V c, I =0)

NOTE: 1.PW 350us, duty cycle 2%

WEITRON

http://www.weitron.com.tw

12 3 4 5

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