Datasheet > 2SB772

2SB772

更新时间： 2024-11-13 05:56:59

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SECOS		晶体晶体管
页数	文件大小	规格书
2页	364K
描述
PNP Type Plastic Encapsulate Transistors

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技术参数
数据手册

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2SB772 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.55	Base Number Matches：	1

2SB772 数据手册

2SB772

PNP Type

Elektronische Bauelemente

Plastic Encapsulate Transistors

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

TO-92

Features

4.55±0.2

3.5±0.2

* Power Dissipation:

PCM: 625 mW (Tamb=25^oC)

MAXIMUM RATINGS* T_A=25^oCunless otherwise noted

Symbol

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

V_CBO

-40

V_CEO

V_EBO

I_C

-30

+0.08

0.43

–0.07

46^+0.1

-6

–0.1

Collector Current –Continuous

Collector Dissipation

-3

(1.27 Typ).

P_C

0.625

150

^oC

1: Emitter

2: Collector

3: Base

1.25⁺–0⁰.^.2²

T_J

Junction Temperature

Storage Temperature

2 3

T_stg

-55~150

2.54±0.1

ELECTRICAL CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test

conditions

MIN

-40

-30

-6

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic=-100μA ，I_E=0

I_C= -10 mA , I_B=0

I_E= -100 μA，I_C=0

V_CB= -40 V , I_E=0

V_CE=-30 V , I_B=0

-1

μA

Collector cut-off current

I_CEO

-10

-1

Emitter cut-off current

I_EBO

V_EB=-6V ,

I_C=0

_CE= -2V, I_C= -1A

_CE=-2V, I_C= -100mA

h_FE

400

（

）

DC current gain

h_FE

（

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

I_C=-2A, I_B= -0.2A

-0.5

-1.5

V_CE= -5V, I_C=-0.1A

f = 10MHz

Transition frequency

MHz

f _T

CLASSIFICATION OF hFE

(1)

Rank

Range

60-120

100-200

160-320

200-400

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2005 Rev. B

Page 1 of 2

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