SMD Type
Transistors
PNP Tr
ansistors
2SB772A
■Features
1.70 0.1
● PNP transistor High current output up to 3A
● Low Saturation Voltage
● Complement to 2SD882A
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■Absolute Maximum Ratings Ta = 25℃
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
Rating
-70
Unit
V
V
-60
-6
V
-3
A
Pc
0.5
W
℃
℃
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55 to 150
■Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic=-100uA ,IE=0
Min
-70
-60
-6
Typ Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
VCBO
VCEO
VEBO
ICBO
IC= -10 mA , IB=0
IE= -100 uA ,IC=0
VCB=-70 V , IE=0
VEB=-6V , IC=0
V
V
-1
-1
μA
μA
Emitter cut-off current
IEBO
VCE= -2V, IC= -1A
VCE=-2V, IC= -100mA
IC=-2A, IB=- 0.2A
IC=-2A, IB= -0.2A
60
32
400
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
f T
-0.5
-1.5
V
V
VCE=-5 V, IC=-0.1mA,f = 10MHz
50
MHz
■Classification of hfe(1)
Type
Range
Marking
2SB772A-R
60-120
2SB772A-Q
2SB772A-P
160-320
772AP
2SB772A-E
200-400
772AE
100-200
772AQ
772AR
1
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