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2SB766AR PDF预览

2SB766AR

更新时间: 2024-01-12 17:26:48
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 239K
描述
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MINIP3-F1, 3 PIN

2SB766AR 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.59Base Number Matches:1

2SB766AR 数据手册

 浏览型号2SB766AR的Datasheet PDF文件第2页浏览型号2SB766AR的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Transistors  
2SB0766, 2SB0766A (2SB766, 2SB766A)  
Silicon PNP epitaxial planar type  
Unit: mm  
For low-frequency output amplification  
4.5 0.1  
1.6 0.2  
Complementary to 2SD0874 (2SD874), 2SD0874A (2SD874A)  
1.5 0.1  
Features  
Large collector power dissipation PC  
Mini type package, allowing downsizing of the equipment and automatic  
insertion through the tape packing and the magazine packing  
3
1
0.4 0.08  
1.5 0.1  
0.4 0.04  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
2SB0766  
2SB0766A  
2SB0766  
2SB0766A  
VCBO  
V
Collector-base voltage  
(Emitter open)  
45˚  
3.0 0.15  
VCEO  
5  
V
Collector-emitter voltage  
(Base open)  
1: Base  
2: Collector  
3: Emitter  
50  
Emitter-base voltage (Collector VEB
5  
V
A
MiniP3-F1 Package  
Collector current  
IC  
ICP  
PC  
Tj  
Peak collector current  
Collector power disipaon *  
Junction temperure  
Storage tempature  
1.5  
1
A
Marking Symbol:  
2SB0766: A  
2SB0766A: B  
W
°C  
°C  
150  
55 to +150  
Note) : Pricircuiboard: Copper foil m2 or more, and the board thickness of 1.7 mm for the collector portion.  
ElecCharacterisics Ta = 25°C 3°C  
Parameter  
Symbol  
Conditions  
IC = −10 µA, IE = 0  
Min  
30  
60  
25  
50  
5  
Typ  
Max  
Unit  
2S0766  
2SB0766A  
2SB0766  
2SB0766A  
VCBO  
V
ollector-base voltag
(mitter n)  
VCEO  
IC = −2 mA, IB 0  
V
Cooltag
(Bas
Emitter-age (Collector open)  
Collector-base cutoff current (itter open)  
VEBO  
ICBO  
IE = −10 µA, IC = 0  
V
µA  
VCB = −20 V, IE = 0  
0.1  
1
2
Forward current transfer ratio *  
hFE1  
hFE2  
VCE = −10 V, IC = −500 mA  
VCE = −5 V, IC = −1 A  
85  
50  
340  
*
1
Collector-emitter saturation voltage *  
VCE(sat) IC = −500 mA, IB = −50 mA  
VBE(sat) IC = −500 mA, IB = −50 mA  
0.2 0.4  
0.85 1.20  
200  
V
V
1
Base-emitter saturation voltage *  
Transition frequency  
fT  
VCB = −10 V, IE = 50 mA, f = 200 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
MHz  
pF  
Collector output capacitance  
Co
20  
30  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Pulse measurement  
*
2: Rank classification  
*
Rank  
Q
R
S
hFE1  
85 to 170  
120 to 240  
170 to 340  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: March 2004  
SJC00051DED  
1

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