Transistor
2SB0767 (2SB767)
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD0875 (2SD875)
Unit: mm
1.5 0.1
4.5 0.1
1.6 0.2
Features
Large collector power dissipation PC.
High collector to emitter voltage VCEO
I
G
G
.
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
45°
0.4 0.08
0.4 0.04
0.5 0.08
1.5 0.1
Absolute Maximum Ratings (Ta=25˚C)
I
3.0 0.15
2
3
1
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
–80
marking
–80
V
–5
V
–1
– 0.5
A
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
IC
A
*
Collector power dissipation
Junction temperature
Storage temperature
PC
1
W
˚C
˚C
Marking symbol : C
Tj
150
Tstg
–55 ~ +150
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
ICBO
Conditions
VCB = –20V, IE = 0
C = –10µA, IE = 0
min
typ
max
Unit
µA
V
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
– 0.1
VCBO
VCEO
VEBO
I
–80
–80
–5
IC = –100µA, IB = 0
V
IE = –10µA, IC = 0
V
*1
hFE1
hFE2
VCE = –10V, IC = –150mA*2
VCE = –5V, IC = –500mA*2
IC = –300mA, IB = –30mA*2
IC = –300mA, IB = –30mA*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
90
330
Forward current transfer ratio
50
100
– 0.2
– 0.85
120
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
–0.4
–1.2
V
V
Transition frequency
fT
MHz
pF
Collector output capacitance
Cob
20
30
*2 Pulse measurement
*1
h
Rank classification
Rank
FE1
Q
R
S
hFE1
Marking Symbol
90 ~ 155
CQ
130 ~ 220
CR
185 ~ 330
Note.) The Part number in the Parenthesis shows
conventional part number.
CS
1