Datasheet > 2SB767-Q-HF

2SB767-Q-HF

更新时间： 2024-09-26 01:08:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	952K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB767-Q-HF 数据手册

SMD Type

Transistors

PNP Transistors

2SB767-HF

1.70 0.1

■ Features

● Large collector power dissipation P

● High collector to emitter voltage VCEO

● Complimentary to 2SD875-HF

0.42 0.1

0.46 0.1

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-80

-5

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

-0.5

-1

℃

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-80

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA， I =0

= -100μA， I

E=0

C=0

CBO

EBO

CB= -60 V , I

EB= -4V , I

-100

-0.4

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-300 mA, I

=-30mA

-0.2

=-300 mA, I

-0.85 -1.2

330

FE(1)

FE(2)

CE= -10V, I

C= -150mA

DC current gain

CE=- 5V, I = -500mA

100

Collector output capacitance

Transition frequency

Cob

CB= -10V, I

^CE= -10V, I

= 0,f=1MHz

= 50mA,f=200MHz

120

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SB767-Q-HF

90-155

2SB767-R-HF

130-220

2SB767-S-HF

185-330

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