Datasheet > 2SB766-Q-HF

2SB766-Q-HF

更新时间： 2024-02-04 00:23:21

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	910K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB766-Q-HF 数据手册

SMD Type

Transistors

PNP Transistors

2SB766-HF

1.70 0.1

■ Features

● Large collector power dissipation P

● Complimentary to 2SD874-HF

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-30

Collector - Emitter Voltage

Emitter - Base Voltage

-25

-5

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

-1

-1.5

℃

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -2 mA， I =0

= -100μA， I

Min

-30

-25

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

CB= -20 V , I

EB= -4V , I

-100

-0.4

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-500 mA, I

=-50mA

-0.2

C=-500 mA, I

-0.85 -1.2

340

FE(1)

FE(2)

CE= -10V, I

= -500mA

DC current gain

CE=- 5V, I = -1A

Collector output capacitance

Transition frequency

Cob

CB= -10V, I

^CE= -10V, I

E= 0,f=1MHz

C= -50mA,f=200MHz

200

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SB766-Q-HF

85-170

2SB766-R-HF

120-240

2SB766-S-HF

170-340

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