Datasheet > 2SB1640

2SB1640

更新时间： 2024-11-10 22:04:07

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管
页数	文件大小	规格书
4页	139K
描述
TOSHIBA Transistor Silicon PNP Triple Diffused Type

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2SB1640 数据手册

2SB1640

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SB1640

Audio Frequency Power Amplifier

Unit: mm

•

Low saturation voltage: V

= −1.5 V (max)

(I = −2 A, I = −0.2 A)

CE (sat)

•

Collector metal (fin) is covered with mold region.

Complementary to 2SD2525

Maximum Ratings

(Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

−60

−7

−3

Collector current

Pulse

−6

Base current

−0.5

1.8

JEDEC

JEITA

―

Collector power dissipation

Junction temperature

°C

150

TOSHIBA

2-10T1A

Storage temperature range

stg

−55 to 150

Weight: 1.5 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= −60 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

―

−10

―

µA

CBO

Emitter cut-off current

= −7 V, I = 0

EBO

Collector-emitter breakdown voltage

= −50 mA, I = 0

−60

100

―

(BR) CEO

= −5 V, I = −0.5 A

―

320

―

FE (1)

FE (2)

DC current gain

= −5 V, I = −2 A

―

Collector-emitter saturation voltage

Base-emitter voltage

= −2 A, I = −0.2 A

−0.1

−0.75

−1.5

−1.0

―

CE (sat)

= −5 V, I = −0.5 A

―

Transition frequency

= −5 V, I = −0.5 A

―

MHz

Collector output capacitance

= −10 V, I = 0, f = 1 MHz

―

Marking

B1640

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2004-07-26

12 3 4

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