Datasheet > 2SB1645P

2SB1645P

更新时间： 2024-11-10 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器局域网
页数	文件大小	规格书
3页	67K
描述
TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 160V V(BR)CEO \| 8A I(C) \| TO-247VAR

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数据手册

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2SB1645P 数据手册

Power Transistors

2SB1645

Silicon PNP triple diffusion planar type Darlington

Unit: mm

For power amplification

15.5±±.5

3.±±±.3

φ 3.2±±.1

5°

I Features

• Satisfactory forward current transfer ratio h_FEcharacteristics

• Wide area of safe operation (ASO)

• Optimum for the output stage of a HiFi audio amplifier

5°

(4.±)

2.±±±.2

1.1±±.1

I Absolute Maximum Ratings T_C= 25°C

±.7±±.1

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

5.45±±.3

1±.9±±.5

−160

5°

−5

1: Base

2: Collector

3: Emitter

−15

I_C

−8

TOP-3E Package

T_C= 25°C

T_a= 25°C

P_C

100

Collector power

dissipation

Internal Connection

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

−100

Unit

µA

Collector cutoff current

V_CB= −160 V, I_E= 0

V_EB= −5 V, I_C= 0

I_CEO

Emitter cutoff current

I_EBO

Collector to emitter voltage

Forward current transfer ratio

V_CEO

h_FE1

I_C= −10 mA, I_B= 0

−160

500

V_CE= −5 V, I_C= −1 A

V_CE= −5 V, I_C= −7 A

I_C= −7 A, I_B= −7 mA

V_CE= −10 V, I_C= − 0.5 A, f = 1 MHz

I_C= 7 A, I_B1= −7 mA, I_B2= 7 mA

V_CC= −50 V

h_FE2

3 500

15 000

−3

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)

V_BE(sat)

f_T

−3

1.0

1.5

1.2

MHz

µs

t_on

Storage time

t_stg

µs

Fall time

t_f

µs

Note) : Rank classification

Rank

h_FE2

5 000 to 15 000 3 500 to 10 000

12 3

中文翻译

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