Datasheet > 2SB1647_2014

2SB1647_2014

更新时间： 2024-11-12 01:18:55

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	166K
描述
Silicon PNP Darlington Power Transistors

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中文翻译

获取价格

数据手册

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2SB1647_2014 数据手册

JMnic

Product Specification

Silicon PNP Darlington Power Transistors

2SB1647

DESCRIPTION

·With TO-3PN package

·Complement to type 2SD2560

APPLICATIONS

·Audio ,regulator and general purpose

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-150

-5

UNIT

Open base

Open collector

-15

I_B

Base current

-1

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

130

℃

T_j

150

T_stg

-55~150

12 3

中文翻译

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