2SB1642

更新时间： 2024-11-11 07:30:07

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
4页	79K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SB1642 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1642

DESCRIPTION

·With TO-220F package

·Low collector saturation voltage:

_CE(SAT)=-1.5V(Max) at I_C=-2.5A,I_B=-0.25A

·Collector power dissipation:

P_C=25W(T_C=25℃)

APPLICATIONS

·Audio frequency power amplifier applications

PINNING

DESCRIPTION

Emitter

Collector

Base

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-60

UNIT

Open base

-60

Open collector

-7

-4

I_B

Base current

-1

T_a=25℃

T_C=25℃

2.0

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3 4

中文翻译

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