Datasheet > 2SB1643Q

2SB1643Q

更新时间： 2024-11-10 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
4页	56K
描述
TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-221VAR

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中文翻译

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数据手册

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2SB1643Q 数据手册

Power Transistors

2SB1643

Silicon PNP epitaxial planar type

Unit: mm

3.4±0.3

8.5±0.2

6.0±0.5

For power amplification

1.0±0.1

Features

High collector to emitter V_CEO

High collector power dissipation P_C

■

1.5max.

1.1max.

0.5max.

●

0.8±0.1

●

N type package enabling direct soldering of the radiating fin to

2.54±0.3

the printed circuit board, etc. of small electronic equipment.

5.08±0.5

1:Base

2:Collector

3:Emitter

Absolute Maximum Ratings (T =25˚C)

■

N Type Package

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Unit: mm

3.4±0.3

8.5±0.2

6.0±0.3

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–60

1.0±0.1

–60

–6

I_C

–3

Base current

I_B

–1

R0.5

0.8±0.1

0 to 0.4

Collector power T_C=25°C

2.54±0.3

1.1 max.

P_C

5.08±0.5

dissipation

Ta=25°C

1.3

Junction temperature

Storage temperature

T_j

150

˚C

1:Base

2:Collector

3:Emitter

T_stg

–55 to +150

N Type Package (DS)

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–100

Unit

µA

V_CB= –60V, I_E= 0

Collector cutoff current

I_CEO

I_EBO

V_CEO

V_EB= –40V, I_C= 0

Emitter cutoff current

V_EB= –6V, I_C= 0

Collector to emitter voltage

Forward current transfer ratio

I_C= –25mA, I_B= 0

–60

300

h_FE

V_CE= –4V, I_C= – 0.5A

I_C= –2A, I_B= – 0.05A

V_CE= –12V, I_C= – 0.2A, f = 10MHz

700

–1

Collector to emitter saturation voltage V_CE(sat)

Transition frequency

f_T

MHz

^*h_FERank classification

Rank

h_FE

300 to 500 400 to 700

12 3 4

中文翻译

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