Datasheet > 2SB1643-Q

2SB1643-Q

更新时间： 2024-11-12 01:14:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1160K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1643-Q 数据手册

SMD Type

Transistors

PNP Transistors

2SB1643

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

■ Features

2.30

+0.8

-0.7

+0.2

5.30

-0.2

0.50

● High collector to emitter V^CEO

● High collector power dissipation P

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

+0.15

-0.15

4.60

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector current

Symbol

Rating

-60

-6

Unit

VCBO

VCEO

VEBO

-3

Collector Current - Pulse

Base current

-6

-1

Collector Power Dissipation

Tc = 25℃

Ta = 25℃

1.3

150

Junction Temperature

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector-emitter cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

-60

-6

Ic= -100 uA， I

Ic= -1 mA, I =0

= -100 uA， IC

ICBO

ICEO

EBO

^CB= -60V , I

CE= -40V , I

EB= -6V , I

-0.1

-10

-0.1

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-2 A, I

=-50 mA

=-2 A, I

-1.2

700

hFE

CE= -4V, I

C= -500 mA

300

Transition frequency

CE= -12V, I

C= -200 mA,f=10MHz

MHz

■ Classification of hfe

Type

2SB1643-Q

300-500

2SB1643-P

400-700

Range

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