2SB1572HY

更新时间： 2024-11-11 23:20:07

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
4页	46K
描述
TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-243

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中文翻译

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数据手册

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2SB1572HY 数据手册

DATA SHEET

PNP SILICON EPITAXIAL TRANSISTOR

2SB1572

PNP SILICON EPITAXIAL TRANSISTOR

FEATURES

• Low V^CE(sat): V^CE(sat)1≤ −0.4 V

• Complementary to 2SD2403

PACKAGE DRAWING (Unit: mm)

4.5±0.1

1.6±0.2

1.5±0.1

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)

I^B(DC)

I^B(pulse)

P^T

−80

−60

−6.0

−3.0

−5.0

−0.2

−0.4

2.0

150

°C

0.42

±0.06

0.42

±0.06

Collector Current (pulse) ^Note1

Base Current (DC)

0.47

±0.06

3.0

1.5

+0.03

0.41

–0.05

Base Current (pulse) ^Note1

Total Power Dissipation ^Note2

E: Emitter

C: Collector (Fin)

B: Base

Junction Temperature

T^j

Storage Temperature Range

Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%

T^stg

–55 to + 150

2. When mounted on ceramic substrate of 16 cm²x 0.7 mm

ELECTRICAL CHARACTERISTICS (T^A= 25°C)

CHARACTERISTICS

Collector Cut-off Current

Emitter Cut-off Current

SYMBOL

I^CBO

TEST CONDITIONS

V^CB= −80 V, I^E= 0

MIN.

TYP.

MAX.

−100

UNIT

−

I^EBO

V^EB= −6.0 V, I^C= 0

Note

DC Current Gain

h^FE1

h^FE2

V^BE

V^CE= −2.0 V, I^C= −0.1 A

V^CE= −2.0 V, I^C= −1.0 A

V^CE= −2.0 V, I^C= −0.1 A

I^C= −2.0 A, I^B= −0.1 A

I^C= −3.0 A, I^B= −0.15 A

I^C= −2.0 A, I^B= −0.1 A

V^CE= −10 V, I^E= 0.3 A

100

200

−0.685

−0.2

−0.3

−0.89

160

400

−0.73

−0.4

−0.6

−1.2

−

Note

Base to Emitter Voltage

−0.63

Note

Collector Saturation Voltage

V^CE(sat)1

V^CE(sat)2

V^BE(sat)

f^T

Collector Saturation Voltage

Note

Base Saturation Voltage

Gain Bandwidth Product

Output Capacitance

Turn-on Time

MHz

C^ob

V^CB= −10 V, I^E= 0, f = 1.0 MHz

I^C= −1.0 A, V^CC= −10 V,

t^on

155

Storage Time

t^stg

R^L= 5.0 Ω, I^B1= −I^B2= −0.1 A,

510

Fall Time

t^f

Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%

h^FECLASSFICATION

Marking

h^FE2

160 to 320

100 to 200

200 to 400

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published July 2001 NS CP(K)

Printed in Japan

D11204EJ3V0DS00 (3rd edition)

2001

12 3 4

中文翻译

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与2SB1572HY相关器件

型号	品牌	获取价格	描述	数据表
2SB1572-HY	NEC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1572-HY	RENESAS	获取价格	3A, 60V, PNP, Si, POWER TRANSISTOR
2SB1572-HY-AZ	NEC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1572HZ	NEC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-243
2SB1572-HZ	RENESAS	获取价格	3A, 60V, PNP, Si, POWER TRANSISTOR
2SB1572-HZ-AZ	RENESAS	获取价格	3A, 60V, PNP, Si, POWER TRANSISTOR
2SB1572-X	KEXIN	获取价格	PNP Transistors
2SB1572-Y	KEXIN	获取价格	PNP Transistors
2SB1572-Z	KEXIN	获取价格	PNP Transistors
2SB1573	PANASONIC	获取价格	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon

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