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2SB1574-R

更新时间: 2024-11-13 01:14:11
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描述
PNP Transistors

2SB1574-R 数据手册

  
SMD Type  
Transistors  
PNP Transistors  
2SB1574  
TO-252  
Unit: mm  
+0.15  
-0.15  
6.50  
+0.1  
-0.1  
Features  
2.30  
+0.8  
-0.7  
+0.2  
5.30  
-0.2  
0.50  
Collector breakdown voltage: VCBO/VCEO = –50V  
Collector current: I = –2A  
C
For low-frequency output amplification  
0.127  
max  
+0.1  
-0.1  
0.80  
0.1  
0.1  
0.60+-  
1 Base  
2.3  
+0.15  
-0.15  
4.60  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
-50  
-50  
-5  
Unit  
V
VCBO  
VCEO  
VEBO  
Collector Current - Continuous  
Collector Current - Pulse  
Collector Power Dissipation  
Junction Temperature  
I
C
-2  
A
I
CP  
-3  
P
C
10  
W
T
J
150  
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
V
V
V
CBO  
CEO  
EBO  
-50  
-50  
-5  
Ic= -100 uAI  
Ic= -1 mA, I =0  
= -100 uAI  
CB= -50V , I =0  
EB= -5V , I =0  
E
=0  
V
B
I
E
C
=0  
I
CBO  
EBO  
V
V
E
-0.1  
-0.1  
-0.3  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=-1 A, I  
B
=-50 mA  
=-50 mA  
-0.2  
V
C=-1 A, I  
B
-0.85 -1.2  
340  
V
V
V
V
CE= -2V, I  
CE= -2V, I  
C
= -200 mA  
= -1 A  
120  
60  
DC current gain  
hFE  
C
Collector output capacitance  
Transition frequency  
C
ob  
CB= -10V, I  
CE= -10V, I  
E
= 0,f=1MHz  
= 50 mA,f=200MHz  
45  
80  
60  
pF  
f
T
E
MHz  
Classification of hfe(1)  
Type  
2SB1574-R  
120-240  
2SB1574-S  
170-340  
Range  
1
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