SMD Type
Transistors
PNP Transistors
2SB1574
TO-252
Unit: mm
+0.15
-0.15
6.50
+0.1
-0.1
■ Features
2.30
+0.8
-0.7
+0.2
5.30
-0.2
0.50
● Collector breakdown voltage: VCBO/VCEO = –50V
● Collector current: I = –2A
C
● For low-frequency output amplification
0.127
max
+0.1
-0.1
0.80
0.1
0.1
0.60+-
1 Base
2.3
+0.15
-0.15
4.60
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
-50
-50
-5
Unit
V
VCBO
VCEO
VEBO
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
-2
A
I
CP
-3
P
C
10
W
℃
T
J
150
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
V
V
V
CBO
CEO
EBO
-50
-50
-5
Ic= -100 uA, I
Ic= -1 mA, I =0
= -100 uA, I
CB= -50V , I =0
EB= -5V , I =0
E
=0
V
B
I
E
C
=0
I
CBO
EBO
V
V
E
-0.1
-0.1
-0.3
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=-1 A, I
B
=-50 mA
=-50 mA
-0.2
V
C=-1 A, I
B
-0.85 -1.2
340
V
V
V
V
CE= -2V, I
CE= -2V, I
C
= -200 mA
= -1 A
120
60
DC current gain
hFE
C
Collector output capacitance
Transition frequency
C
ob
CB= -10V, I
CE= -10V, I
E
= 0,f=1MHz
= 50 mA,f=200MHz
45
80
60
pF
f
T
E
MHz
■ Classification of hfe(1)
Type
2SB1574-R
120-240
2SB1574-S
170-340
Range
1
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