Datasheet > 2SB1578GB2

2SB1578GB2

更新时间： 2024-11-11 23:20:07

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
6页	131K
描述
TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 5A I(C) \| TO-243VAR

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中文翻译

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数据手册

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2SB1578GB2 数据手册

DATA SHEET

SILICON TRANSISTOR

2SB1578

PNP SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SB1578 features high current capacity in small dimension

and is ideal for DC/DC converters and mortor drivers.

FEATURES

•

New package with dimensions in between those of small signal

and power signal package

•

High current capacitance

Low collector saturation voltage

Complementary transistor with 2SD2425

QUALITY GRADES

• Standard

Electrode connection

1: Emitter

Please refer to “Quality Grades on NEC Semiconductor Devices”

(Document No. C11531E) published by NEC Corporation to

know the specification of quality grade on the devices and its

recommended applications.

2: Collector

3: Base

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)

I^B(DC)

P^T

Conditions

Ratings

−60

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

−60

−6.0

−5.0

PW ≤ 10 ms, duty cycle ≤ 50 %

−7.0

−1.0

7.5 cm²× 0.7 mm ceramic board used

Total power dissipation

Junction temperature

Storage temperature

2.0

°C

T^j

150

−55 to +150

T^stg

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16147EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

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与2SB1578GB2相关器件

型号	品牌	获取价格	描述	数据表
2SB1578-GB2	RENESAS	获取价格	5A, 60V, PNP, Si, POWER TRANSISTOR
2SB1578-GB2-AZ	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1578GB2-T1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,60V V(BR)CEO,5A I(C),TO-243VAR
2SB1578GB2-T2-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,60V V(BR)CEO,5A I(C),TO-243VAR
2SB1578GB3	NEC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 5A I(C) \| TO-243VAR
2SB1578-GB3	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1578-GB3-AZ	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1578GB3-T1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,60V V(BR)CEO,5A I(C),TO-243VAR
2SB1578GB3-T2-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,60V V(BR)CEO,5A I(C),TO-243VAR
2SB1580	ROHM	获取价格	Power Transistor (−100V , −2A)