Datasheet > 2SB1580U

2SB1580U

更新时间： 2024-10-15 14:55:55

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
3页	243K
描述
达林顿三极管

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数据手册

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2SB1580U 数据手册

2SB1580U

PNP Silicon Epitaxial Power Transistor

Darlington Transistor

for high gain amplification

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

Value

100

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current (DC)

Collector Current (Pulse)

-I_C

3 ¹⁾

0.5

1 ²⁾

P_tot

Total Power Dissipation

T_j

150

Junction Temperature

℃

Storage Junction Temperature Range

¹⁾Single pulse: P_W= 100 ms

²⁾When mounted on a 250 mm²x 0.8 t ceramic substrate.

T_stg

- 55 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

h_FE

-I_CBO

Min.

Typ.

Max.

Unit

DC Current Gain

1000

10000

µA

at -V_CE= 2 V, -I_C= 1 A

Collector Base Cutoff Current

at -V_CB= 100 V

Emitter Base Cutoff Current

at -V_EB= 7 V

-I_EBO

100

Collector Base Breakdown Voltage

at -I_C= 50 µA

-V_(BR)CBO

-V_(BR)CEO

-V_(BR)EBO

-V_CE(sat)

f_T

Collector Emitter Breakdown Voltage

at -I_C= 5 mA

Emitter Base Breakdown Voltage

at -I_E= 5 mA

Collector Emitter Saturation Voltage

at -I_C= 1 A, -I_B= 1 mA

1.5

Current Gain Bandwidth Product

at -V_CE= 5 V, I_E= 100 mA, f = 30 MHz

MHz

Collector Output Capacitance

at -V_CB= 10 V, f = 1 MHz

C_ob

Dated：20/02/2016 Rev：03

12 3

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