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2SB1587_07

更新时间: 2024-11-21 12:50:11
品牌 Logo 应用领域
三垦 - SANKEN 晶体晶体管
页数 文件大小 规格书
1页 36K
描述
Silicon PNP Epitaxial Planar Transistor

2SB1587_07 数据手册

  
E
C
(70)  
B
Darlington 2 S B1 5 8 7  
Equivalent circuit  
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438)  
Application : Audio, Series Regulator and General Purpose  
External Dimensions FM100(TO3PF)  
Absolute maximum ratings  
Electrical Characteristics  
(Ta=25°C)  
(Ta=25°C)  
Ratings  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Symbol  
Ratings  
Unit  
Unit  
Conditions  
±0.2  
5.5  
±0.2  
15.6  
–160  
ICBO  
–100max  
–100max  
–150min  
5000min  
–2.5max  
–3.0max  
65typ  
V
VCB=160V  
µA  
µA  
V
±0.2  
3.45  
–150  
IEBO  
V
VEB=5V  
–5  
V(BR)CEO  
hFE  
V
IC=30mA  
±0.2  
ø3.3  
–8  
–1  
VCE=4V, IC=6A  
IC=6A, IB=6mA  
IC=6A, IB=6mA  
VCE=12V, IE=1A  
VCB=10V, f=1MHz  
A
a
b
IB  
VCE(sat)  
VBE(sat)  
fT  
V
V
A
PC  
75(Tc=25°C)  
150  
W
°C  
°C  
Tj  
MHz  
pF  
1.75  
2.15  
0.8  
Tstg  
COB  
160typ  
–55 to +150  
+0.2  
-0.1  
1.05  
to  
to  
to  
hFE Rank O(5000 12000), P(6500 20000), Y(15000 30000)  
+0.2  
±0.1  
±0.1  
0.65  
-0.1  
5.45  
5.45  
1.5  
3.35  
Typical Switching Characteristics (Common Emitter)  
1.5  
4.4  
C
Weight : Approx 6.5g  
a. Part No.  
VCC  
(V)  
RL  
()  
IC  
(A)  
VBB1  
(V)  
VBB2  
(V)  
IB1  
(mA)  
IB2  
(mA)  
ton  
(µs)  
tstg  
(µs)  
tf  
(µs)  
B
E
b. Lot No.  
–60  
10  
–6  
–10  
5
–6  
6
0.7typ  
3.6typ  
0.9typ  
IC VCE Characteristics (Typical)  
VCE(sat) IB Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=–4V)  
–8  
–6  
–4  
–8  
–3  
–6  
–4  
–2  
0
–2  
–8A  
–6A  
IC=–4A  
IB=–0.3mA  
–1  
–2  
0
0
0
–2  
–4  
–6  
–0.2 0.5 –1  
–5 –10  
–50 –100 –200  
0
–1  
–2  
–3  
Collector-Emitter Voltage VCE(V)  
Base Current IB(mA)  
Base-Emittor Voltage VBE(V)  
j-a t Characteristics  
hFE IC Characteristics (Typical)  
hFE IC Temperature Characteristics (Typical)  
θ
(VCE=–4V)  
(VCE=–4V)  
40,000  
50000  
4
125˚C  
Typ  
25˚C  
10000  
10,000  
5,000  
–30˚C  
1
5000  
0.5  
1000  
–0.2  
0.2  
2,000  
1
5
10  
50 100  
500 1000 2000  
–0.2  
–0.5  
–1  
Collector Current IC(A)  
–5  
–8  
–0.5  
–1  
–5  
–8  
Time t(ms)  
Collector Current IC(A)  
fT IE Characteristics (Typical)  
Safe Operating Area (Single Pulse)  
Pc Ta Derating  
(VCE=–12V)  
80  
–20  
–10  
100  
80  
–5  
60  
40  
Typ  
60  
–1  
40  
20  
0
–0.5  
Without Heatsink  
Natural Cooling  
20  
–0.1  
Without Heatsink  
3.5  
0
–0.05  
0.02 0.05 0.1  
0.5  
1
5
8
–2  
–5  
–10  
–50  
–100 –200  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Ambient Temperature Ta(˚C)  
Emitter Current IE(A)  
50  

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