Datasheet > 2SB1578-GB1-AZ

2SB1578-GB1-AZ

更新时间： 2024-09-24 14:47:31

品牌	Logo	应用领域
日电电子 - NEC		放大器晶体管
页数	文件大小	规格书
6页	129K
描述
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

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中文翻译

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技术参数
数据手册

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2SB1578-GB1-AZ 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.24	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	5 A	集电极-发射极最大电压：	60 V
配置：	SINGLE	最小直流电流增益 (hFE)：	100
JESD-30 代码：	R-PSSO-F3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

2SB1578-GB1-AZ 数据手册

DATA SHEET

SILICON TRANSISTOR

2SB1578

PNP SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SB1578 features high current capacity in small dimension

and is ideal for DC/DC converters and mortor drivers.

FEATURES

•

New package with dimensions in between those of small signal

and power signal package

•

High current capacitance

Low collector saturation voltage

Complementary transistor with 2SD2425

QUALITY GRADES

• Standard

Electrode connection

1: Emitter

Please refer to “Quality Grades on NEC Semiconductor Devices”

(Document No. C11531E) published by NEC Corporation to

know the specification of quality grade on the devices and its

recommended applications.

2: Collector

3: Base

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)

I^B(DC)

P^T

Conditions

Ratings

−60

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

−60

−6.0

−5.0

PW ≤ 10 ms, duty cycle ≤ 50 %

−7.0

−1.0

7.5 cm²× 0.7 mm ceramic board used

Total power dissipation

Junction temperature

Storage temperature

2.0

°C

T^j

150

−55 to +150

T^stg

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16147EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

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与2SB1578-GB1-AZ相关器件

型号	品牌	获取价格	描述	数据表
2SB1578GB1-T1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,60V V(BR)CEO,5A I(C),TO-243VAR
2SB1578GB1-T2-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,60V V(BR)CEO,5A I(C),TO-243VAR
2SB1578GB2	NEC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 5A I(C) \| TO-243VAR
2SB1578-GB2	RENESAS	获取价格	5A, 60V, PNP, Si, POWER TRANSISTOR
2SB1578-GB2-AZ	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1578GB2-T1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,60V V(BR)CEO,5A I(C),TO-243VAR
2SB1578GB2-T2-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,60V V(BR)CEO,5A I(C),TO-243VAR
2SB1578GB3	NEC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 5A I(C) \| TO-243VAR
2SB1578-GB3	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1578-GB3-AZ	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3

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