Datasheet > 2SB1218AS

2SB1218AS

更新时间： 2024-11-19 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	61K
描述
TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 100MA I(C) \| SC-70

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中文翻译

获取价格

数据手册

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2SB1218AS 数据手册

Transistor

2SB1218A

Silicon PNP epitaxial planer type

For general amplification

Unit: mm

Complementary to 2SD1819A

2.1±0.1

0.425

1.25±0.1

0.425

Features

High foward current transfer ratio h_FE

■

●

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–45

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

0.2±0.1

–45

–7

–200

–100

150

˚C

1:Base

2:Emitter

3:Collector

EIAJ:SC–70

S-Mini Type Package

I_C

Collector power dissipation

Junction temperature

Storage temperature

P_C

Marking symbol : B

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–0.1

–100

Unit

µA

V_CB= –20V, I_E= 0

Collector cutoff current

I_CEO

V_CE= –10V, I_B= 0

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

I_C= –10µA, I_E= 0

–45

–7

I_C= –2mA, I_B= 0

I_E= –10µA, I_C= 0

Forward current transfer ratio

h_FE

V_CE= –10V, I_C= –2mA

I_C= –100mA, I_B= –10mA

V_CB= –10V, I_E= 1mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

160

460

Collector to emitter saturation voltage V_CE(sat)

– 0.3

– 0.5

MHz

Transition frequency

f_T

Collector output capacitance

C_ob

2.7

^*h_FERank classification

Rank

h_FE

160 ~ 260

210 ~ 340

290 ~ 460

Marking Symbol

12 3 4

中文翻译

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