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2SB1219A-Q PDF预览

2SB1219A-Q

更新时间: 2024-11-21 01:09:39
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2页 1053K
描述
PNP Transistors

2SB1219A-Q 数据手册

 浏览型号2SB1219A-Q的Datasheet PDF文件第2页 
SMD Type  
Transistors  
PNP Transistors  
2SB1219A  
Features  
Large collector current I  
C
Complementary to 2SD1820A  
1 Base  
2 Emitter  
3 Collector  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
-60  
Unit  
V
VCBO  
VCEO  
VEBO  
-50  
-5  
Collector Current - Continuous  
Collector Current - Pulse  
Collector Power Dissipation  
Junction Temperature  
I
C
-0.5  
A
mW  
I
CP  
-1  
P
C
150  
T
J
150  
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
-60  
-50  
-5  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= -100 μAI  
Ic= -2 mA, I =0  
= -100μAI  
CB= -50V, I =0  
EB= -4V , I =0  
E=0  
B
I
E
C=0  
I
CBO  
EBO  
V
V
E
-0.1  
-0.1  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=-300 mA, I  
B
=-30mA  
=-30mA  
-0.35 -0.6  
V
C
=-300 mA, I  
B
-1.1  
-1.5  
340  
V
V
V
V
CE= -10V, I  
CE= -10V, I  
CB= -10V, I  
CE= -10V, I  
C
= -150 mA  
= -500 mA  
85  
40  
DC current gain  
hFE  
C
Collector output capacitance  
Transition frequency  
C
ob  
T
E= 0,f=1MHz  
6
15  
pF  
f
C= -50 mA,f=200MHz  
200  
MHz  
Classification of hfe(1)  
Type  
Range  
Marking  
2SB1219A-Q  
85-170  
2SB1219A-R  
120-240  
DR  
2SB1219A-S  
170-340  
DS  
2SB1219A  
85-340  
D
DQ  
1
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