Datasheet > 2SB1218AW

2SB1218AW

更新时间： 2024-11-18 04:25:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		晶体晶体管
页数	文件大小	规格书
4页	203K
描述
PNP Silicon Epitaxial Planar Transistor

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中文翻译

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2SB1218AW 数据手册

BL Galaxy Electrical

Production specification

PNP Silicon Epitaxial Planar Transistor

2SB1218AW

FEATURES

Lead-free

High forward current transfer ratio h_FE

Excellent H_FELinearity.

Complements the 2SD1819A.

APPLICATIONS

For general purpose amplification.

SOT-323

ORDERING INFORMATION

Type No.

Marking

BQ1/BR1/BS1

Package Code

SOT-323

2SB1218AW

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

-45

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

-45

-7

Collector Current -Continuous

Collector Dissipation

-200

150

℃

P_C

Junction and Storage Temperature

T_j,T_stg

-55~150

Document number: BL/SSSTF034

Rev.A

www.galaxycn.com

12 3 4

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