Datasheet > 2SB1219

2SB1219

更新时间： 2024-11-18 06:23:31

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	46K
描述
Silicon PNP Epitaxial Planar Type

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中文翻译

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数据手册

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2SB1219 数据手册

SMD Type

TransistIoCrs

Silicon PNP Epitaxial Planar Type

2SB1219

Features

Large collector current IC.

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CP

Rating

-30

Unit

-25

-5

Peak collector current

Collector current

-1

I^C

-500

150

Collector power dissipation

Junction temperature

Storage temperature

P^C

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CBO

VCEO

V^EBO

I^CBO

Testconditons

Min

-30

-25

-5

Typ

Max

Unit

Collector-base voltage

IC = -10 µA, IE = 0

IC = -2 mA, IB = 0

Collector-emitter voltage

Emitter-base voltage

IE = -10 µA, IC = 0

VCB = -20 V, IE = 0

VCE = -10 V, IC = -150 mA

Collector-base cutoff current

Forward current transfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

-0.1

340

ìA

h^FE

V^CE(sat)IC = -300 mA, IB = -30 mA

V^BE(sat)IC = -300 mA, IB = -30 mA

-0.35 -0.6

-1.1

200

-1.5

f^T

VCB = -10 V, IE = 50 mA, f = 200 MHz

VCB = -10 V, IE = 0, f = 1 MHz

MHz

Collector output capacitance

C^ob

hFE Classification

Marking

h^FE

170 340

85 170

120 240

85 340

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