Datasheet > 2SB1197_10

2SB1197_10

更新时间： 2024-11-30 07:29:59

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	697K
描述
PNP Epitaxial Planar Transistor

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中文翻译

获取价格

数据手册

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2SB1197_10 数据手册

2SB1197

-0.8 A, -40 V

PNP Epitaxial Planar Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

SOT-23

ꢀ

Low V_CE(sat).V_CE(sat)≦-0.5V(I_C/ I_B= -0.5A /-50mA)

I_C=-0.8A

Complements of the 2SD1781

Top View

C B

CLASSIFICATION OF h_FE

2SB1197-P

82~180

AHP

2SB1197-Q

2SB1197-R

180~390

AHR

Product-Rank

Range

120~270

AHQ

Marking

Millimeter

Min. Max.

REF.

Min.

Max.

3.04

2.55

1.40

1.15

2.04

0.50

PACKAGE INFORMATION

2.80

2.10

1.20

0.89

1.78

0.30

0.09

0.45

0.08

0.18

0.60

0.177

Package

MPQ

LeaderSize

7’ inch

0.6 REF.

SOT-23

0.89

1.02

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V_CBO

Ratings

-40

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Currrent

V_CEO

-32

V_EBO

-5

I_C

-800

200

Total Power Dissipation

Junction & Storage Temperature

T_J, T_STG

+150, -55 ~ +150

℃

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Min.

Typ.

Max.

Unit

Test Conditions

-40

-32

-5

I_C=-50μA, I_E= 0

I_C=-1mA, I_B= 0

I_E=-50μA, I_C= 0

-0.5

390

μA

V_CB=-20V, I_E= 0

Emitter cut-off current

I_EBO

V_EB= -4V, I_C= 0

Collector-emitter saturation voltage

DC current gain

V_CE(sat)

h_FE

I_C=-500mA, I_B=-50mA

V_CE=-3V, I_C=-100mA

V_CE=-5V, I_C=-50mA, f=100MHz

V_CB=-10V, I_E=0, f=1MHz

Transition frequency

f_T

200

MHz

Collector output capacitance

C_OB

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

31-Dec-2010 Rev. C

Page 1 of 2

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