Datasheet > 2SB1197K

2SB1197K

更新时间： 2024-11-30 07:29:59

品牌	Logo	应用领域
SECOS		晶体晶体管开关光电二极管
页数	文件大小	规格书
3页	119K
描述
Low Frequency Transistor

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中文翻译

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数据手册

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2SB1197K 数据手册

2SB1197K

- 32V, - 0.8A

Elektronische Bauelemente

Low Frequency Transistor

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

3. C ollector

1. E mitter

ƔFEATURES

2. Base

Low V_CE(sat).

V_CE(sat) 0.5V

(I_C/ I_B= - 0.5A / - 50mA)

I_C= - 0.8A.

Complements the 2SD1781K.

Epitaxial planar type

PNP silicon transistor

SC-59

Dim

Min

2.70

1.30

1.00

0.35

1.70

0.00

0.10

0.20

1.25

2.25

Max

3.10

1.70

1.30

0.50

2.30

0.10

0.26

0.60

1.65

3.00

Top View

ƔMECHANICAL DATA

Case: SC-59, Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: See Diagrams Below

Weight: 0.008 grams (approx.)

Mounting Position: Any

All Dimension in mm

ƔABSOLUTE MAXIMUM RATINGS

Rating 25ȃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

P_C

T_J

T_STG

LIMITS

- 40

- 32

- 5

- 0.8

0.2

UNIT

Collector Current

Collector Power Dissipation

Operating Temperature

Storage Temperature Range

150

-55 ~ +150

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 3

12 3

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