2SB1151
-5 A , -60 V
PꢀP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
TO-126
FEATURES
ꢀ
ꢀ
ꢀ
Low Collector-Emitter Saturation Voltage
Large Collector Current
High Power Dissipation
A
B
E
F
C
D
ORDER INFORMATION
Part Number
N
M
H
L
Type
Lead (Pb)-free
K
J
2SB1151-Y
2SB1151-Y-C Lead (Pb)-free and Halogen-free
G
Collector
2
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
Max.
A
B
C
D
E
F
7.40
2.50
10.60
15.30
3.70
7.80
2.90
11.00
15.70
3.90
H
J
K
L
M
N
1.10
0.45
0.66
2.10
1.17
3.00
1.50
0.60
0.86
2.30
1.37
3.20
3
Base
3.90
2.29 TYP.
4.10
1
Emitter
G
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
-60
Unit
Collector-Base Voltage
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
-60
-7
V
Collector Current-Continuous
Collector Power Dissipation
Maximum Junction to Ambient
Junction, Storage Temperature
-5
A
PC
1.25
100
W
RθJA
°C/W
°C
TJ, TSTG
-55~150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min.
-60
-60
-7
Typ.
Max.
Unit
V
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
-
-
-
-
-
-
-
-
-
-
-
-
IC= -100µA, IE=0
IC= -1mA, IB=0
V
-
V
IC=0, IE= -100µA
VCB= -50V, IE=0
VEB= -7V, IC=0
-
-10
-10
320
-
µA
µA
Emitter Cut-Off Current
IEBO
-
hFE(1)
160
60
50
-
VCE= -1V, IC= -2A
VCE= -1V, IC= -0.1A
VCE= -2V, IC= -5A
IC= -2A, IB = -0.2A
IC= -2A, IB = -0.2A
DC Current Gain
hFE(2)
hFE(3)
-
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
-0.3
-1.2
V
V
-
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Oct-2017 Rev. A
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