Power Transistors
2SB1156
Silicon PNP epitaxial planar type
Unit: mm
For power switching
5.0 0.ꢁ
15.0 0.ꢀ
11.0 0.ꢁ
(ꢀ.ꢁ)
Complementary to 2SD1707
φ ꢀ.ꢁ 0.1
I Features
•
•
•
•
Low collector to emitter saturation voltage VCE(sat)
Satisfactory linearity of forward current transfer ratio hFE
Large collector current IC
Full-pack package which can be installed to the heat sink with one
screw
ꢁ.0 0.ꢁ
1.1 0.1
ꢁ.0 0.1
0.6 0.ꢁ
I Absolute Maximum Ratings TC= 25°C
5.45 0.ꢀ
10.9 0.5
ꢁ
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Symbol
VCBO
VCEO
VEBO
ICP
Rating
−130
−80
Unit
V
1 : Base
2 : Collector
3 : Emitter
1
ꢀ
V
EIAJ : SC-96
TOP-3F-A Package
−7
V
−30
A
IC
−20
A
TC = 25°C
Ta = 25°C
PC
100
W
Collector power
dissipation
3
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
I Electrical Characteristics TC = 25°C
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
ICBO
Conditions
Min
Typ
Max
−10
−50
Unit
µA
µA
V
VCB = −100 V, IE = 0
IEBO
VEB = −5 V, IC = 0
Collector to emitter voltage
Forward current transfer ratio
VCEO
hFE1
IC = −10 mA, IB = 0
−80
45
VCE = −2 V, IC = − 0.1 A
VCE = −2 V, IC = −3 A
VCE = −2 V, IC = −10 A
IC = −8 A, IB = − 0.4 A
IC = −20 A, IB = −2 A
IC = −8 A, IB = − 0.4 A
IC = −20 A, IB = −2 A
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
IC = −3 A, IB1 = − 0.8 A, IB2 = 0.8 A,
VCC = −50 V
*
hFE2
90
260
hFE3
30
Collector to emitter saturation voltage VCE(sat)1
VCE(sat)2
− 0.5
−1.5
−1.5
−2.5
V
V
Base to emitter saturation voltage
VBE(sat)1
V
VBE(sat)2
V
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
25
0.5
1.2
0.2
MHz
µs
µs
µs
Note) : Rank classification
*
Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the
rank classification.
Rank
Q
P
hFE2
90 to 180
130 to 260
1