Datasheet > 2SB1116U

2SB1116U

更新时间： 2024-09-15 23:20:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
6页	104K
描述
TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 1A I(C) \| TO-92

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1116U 数据手册

DATA SHEET

SILICON TRANSISTORS

2SB1116, 1116A

PNP SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

Low V^CE(sat)

V^CE(sat)= −0.20 V TYP. (I^C= −1.0 A, I^B= −50 mA)

High P^Tin small dimension with general-purpose

P^T= 0.75 W, V^CEO= −50/−60 V, I^C(DC)= −1.0 A

Complementary transistor with 2SD1616 and 1616A

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Ratings

2SB1116 2SB1116A

Parameter

Symbol

Unit

−60

−50

−80

−60

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Total power dissipation

Junction temperature

Storage temperature

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

P^T

−6.0

−1.0

−2.0

0.75

150

°C

T^j

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50%

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

2SB1116, 1116A

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −60 V, I^E= 0

V^EB= −6.0 V, I^C= 0

V^CE= −2.0 V, I^C= −100 mA

V^CE= −2.0 V, I^C= −1.0 A

V^CE= −2.0 V, I^C= −50 mA

I^C= −1.0 A, I^B= −50 mA

V^CB= −10 V, I^E= 0, f = 1.0 MHz

V^CE= −2.0 V, I^C= −100 mA

MIN.

TYP.

MAX.

−100

Unit

I^EBO

h^FE1**

h^FE2**

V^BE**

V^CE(sat)**

V^BE(sat)**

C^ob

135

600/400

DC current gain

−600

−650

−0.20

−0.9

−700

−0.3

−1.2

DC base voltage

Collector saturation voltage

Base saturation voltage

Output capacitance

Gain bandwidth product

Turn-on time

MHz

µs

f^T

120

V^CC= −10 V, I^C= −100 mA

I^B1= −I^B2= −10 mA,

V^BE(off)= 2 to 3 V

t^on

0.07

0.70

0.07

µs

Storage temperature

Fall time

t^stg

µs

t^f

** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16195EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

下载PDF

与2SB1116U相关器件

型号	品牌	获取价格	描述	数据表
2SB1116-U	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC
2SB1116-X-T92-B	UTC	获取价格	PNP EPITAXIAL SILICON TRANSISTOR
2SB1116-X-T92-K	UTC	获取价格	PNP EPITAXIAL SILICON TRANSISTOR
2SB1117	NEC	获取价格	Suitable for driver of solenoid or motor, or electronic flash
2SB1117K	NEC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 3A I(C) \| TO-221VAR
2SB1117-K	NEC	获取价格	Small Signal Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1117-K-AZ	NEC	获取价格	Small Signal Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
2SB1117L	NEC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 3A I(C) \| TO-221VAR
2SB1117-L	NEC	获取价格	Small Signal Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1117-L-AZ	NEC	获取价格	Small Signal Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon

与2SB1116U相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

6
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

6
SL74HC10N：高性能三输入与非门解析
2024-09-03

88
AIC1781A 电池充电控制器深度解析
2024-09-03

79

产品中心

服务支持

精选活动

关于我们

帮助中心

2SB1116U

2SB1116U 数据手册

与2SB1116U相关器件

与2SB1116U相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SB1116U

2SB1116U 数据手册

与2SB1116U相关器件

与2SB1116U相关文章

您还可以找

您在本页遇到什么问题？