Datasheet > 2SB1119

2SB1119

更新时间： 2024-11-06 07:29:59

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
1页	184K
描述
TRANSISTOR(PNP)

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中文翻译

获取价格

数据手册

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2SB1119 数据手册

2SB1119

SOT-89-3L

TRANSISTOR(PNP)

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER

Small Flat Package

LF Amplifier, Electronic Governor Applications

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-25

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-25

-5

Collector Current

-1

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

℃/W

℃

R_θJA

T_j

250

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

-25

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-10µA,I_E=0

I_C=-1mA,I_B=0

I_E=-10µA,I_C=0

V_CB=-20V,I_E=0

-100

560

Emitter cut-off current

I_EBO

V_EB=-4V,I_C=0

h_FE(1)

V_CE=-2V, I_C=-50mA

V_CE=-2V, I_C=-1A

I_C=-500mA,I_B=-50mA

V_CB=-10V,I_E=0, f=1MHz

100

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

V_CE(sat)

V_BE(sat)

C_ob

-0.7

-1.2

f_T

V^CE=-10V,I^C=-50mA,

180

MHz

Transition frequency

CLASSIFICATION OF h_FE(1)

RANK

RANGE

100–200

140–280

200–400

280–560

MARKING

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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