Datasheet > 2SB1120

2SB1120

更新时间： 2024-09-16 12:53:39

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描述
Low collector-to-emitter saturation voltage : VCE(sat)max=-0.45V. small-sized hybrid ICS

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2SB1120 数据手册

Product specification

2SB1120

Features

Low collector-to-emitter saturation voltage :

V^CE(sat)max=-0.45V.

Large current capacity : I^C=-2.5A, I^CP=-5A.

Very small size making it easy to provide highdensity,

small-sized hybrid IC’s.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-20

-10

-7

-2.5

Collector current (pulse)

Collector dissipation

I^CP

-5

P^C

500

Jumction temperature

Storage temperature

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

I^CBO

I^EBO

Testconditons

Min

Typ

Max

-100

560

Unit

V^CB= -16V , I^E= 0

V^CB= -4V , I^E= 0

V^CE= -2V , I^C= -500mA

V^CE=-2V I^C=-3A

100

DC current Gain

h^FE

Gain bandwidth product

f^T

V^CE= -10V , I^C= -50mA

250

-0.25 -0.45

MHz

Collector-emitter saturation voltage

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Output capacitance

V^CE(sat)I^C= -1.5A , I^B= -0.15A

V^(BR)CBOI^C= -10ìA , I^E= 0

-20

-10

-7

V^(BR)CEO

I^C= -1mA , R^BE=

V^(BR)EBOI^E= -10ìA , I^C= 0

C^obV^CB= -10V , f = 1MHz

hFE Classification

Marking

Rank

hFE

280 560

100 200

160 320

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4008-318-123

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