Datasheet > 2SB1119R

2SB1119R

更新时间： 2024-11-06 20:18:07

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描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SB1119R 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Is Samacsys：	N	Base Number Matches：	1

2SB1119R 数据手册

Transys

Electronics

I M I T E D

SOT-89 Plastic-Encapsulated Transistors

SOT-89

2SB1119 TRANSISTOR (PNP)

1. ^BASE

FEATURES

Power dissipation

2. ^COLLECTOR

3. ^EMITTER

P_CM

500 mW (Tamb=25℃)

Collector current

I_CM:

-1

Collector current (Pulse)

ICP:

-2

Collector-base voltage

V_(BR)CBO

-25

Operating and storage junction temperature range

T_J,T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-10µA, I_E=0

Ic=-1mA, I_B=0

MIN

-25

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-10µA, I_C=0

µA

V_CB=-20V, I_E=0

-0.1

560

I_EBO

Emitter cut-off current

V_EB=-4V, I_C=0

h_FE(1)

V_CE=-2V, I_C=-50mA

100

DC current gain

h_FE(2)

V_CE=-2V, I_C=-1A

V_CE(sat)

V_BE(SAT)

f_T

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=-500mA, I_B=-50mA

V_CE=-10V, I_C=-50mA

-0.7

-1.2

MHz

180

C_ob

Collector output capacitance

V_CB=-10V, f=1MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

Marking

100-200

140-280

200-400

280-560

中文翻译

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