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2SB1119 PDF预览

2SB1119

更新时间: 2024-09-16 07:29:59
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
3页 141K
描述
PNP Silicon Medium Power Transistor

2SB1119 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.6Is Samacsys:N
Base Number Matches:1

2SB1119 数据手册

 浏览型号2SB1119的Datasheet PDF文件第2页浏览型号2SB1119的Datasheet PDF文件第3页 
2SB1119/2SD1619  
PNP Silicon  
Elektronische Bauelemente  
Medium Power Transistor  
RoHS Compliant Product  
D
D1  
A
SOT-89  
b1  
FEATURES  
Power dissipation  
b
C
e
e1  
P CM : 500mW˄Tamb=25ć˅  
1.BASE  
Collector current  
2.COLLECTOR  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min  
Max  
Min  
Max  
: -1  
A
ICM  
3.EMITTER  
1.400  
0.320  
0.360  
0.350  
4.400  
1.400  
2.300  
3.940  
1.600  
0.520  
0.560  
0.440  
4.600  
1.800  
2.600  
4.250  
0.055  
0.013  
0.014  
0.014  
0.173  
0.055  
0.091  
0.155  
0.063  
0.020  
0.022  
0.017  
0.181  
0.071  
0.102  
0.167  
A
Collector-base voltage  
VB(BR)CBO : -25  
Operating and storage junction temperature range  
b
b1  
c
V
D
D1  
E
TJˈTstg: -55ć to +150ć  
E1  
e
1.500TYP  
0.060TYP  
2.900  
0.900  
3.100  
1.100  
0.114  
0.035  
0.122  
0.043  
e1  
L
ELECTRICAL CHARACTERISTICS˄Tamb=25ć unlessotherwise specified˅  
CLASSIFICATION OF hFE(1)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=-10­A ˈIE=0  
IC= -1 mA , IB=0  
IE= -10 ­AˈIC=0  
VCB= -20 V , IE=0  
VCE= -20 V , IB=0  
MIN  
-25  
-25  
-5  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
-0.1  
-0.1  
-0.1  
560  
­A  
­A  
­A  
Collector cut-off current  
ICEO  
Emitter cut-off current  
IEBO  
VEB=-4V ,  
IC=0  
CE= -2V, IC= -50mA  
CE=-2V, IC= -1A  
hFE  
V
V
100  
40  
˄
˅
˅
1
2
DC current gain  
hFE  
˄
Collector-emitter saturation voltage  
VCE(sat)  
IC=-0.5A, IB= -50mA  
-0.7  
-1.2  
V
V
Base-emitter saturation voltage  
Transition frequency  
VBE(sat)  
fT  
IC=-0.5A, IB= -50mA  
VCE= -10V, IC=-50mA  
180  
25  
MHz  
Collector output capacitance  
Cob  
pF  
VCB=-10V, f = 1MH  
Marking 2SB1119 :  
2SD1619 :  
BB  
DB  
CLASSIFICATION OF hFE  
(1)  
Rank  
R
S
T
200-400  
U
Range  
100-200  
140-280  
280-560  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 3  

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