SMD Type
Transistors
PNP Transistors
2SB1118-HF
■ Features
1.70 0.1
● Low collector-to-emitter saturation voltage.
● Very small size making it easy to provide high
highdensity, small-sized hybrid IC’s.
● Complementary to 2SD1618-HF
0.42 0.1
0.46 0.1
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
-20
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
-15
-5
Collector Current - Continuous
Collector current -Pulse
I
C
-0.7
-1.5
0.5
A
I
CP
Collector Power Dissipation
P
C
W
℃
(Note.1)
1.3
Junction Temperature
T
J
150
Storage Temperature range
T
stg
-55 to 150
Note.1: Mounted on ceramic board (250mm2 ×0.8mm)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
-20
-15
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= -100 μA, I
Ic= -1 mA, RBE=∞
= -100μA, I =0
CB= -15V , I =0
EB= -4V , I =0
=-5 mA, I =-0.5mA
E=0
I
E
C
I
CBO
EBO
V
V
E
-0.1
-0.1
-35
uA
I
C
I
I
I
C
B
-15
-60
-0.8
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
mV
V
C
=-100 mA, I
=-100 mA, I
B
=-10mA
=-10mA
-120
-1.2
560
V
C
B
V
V
V
V
CE= -2V, I
CE= -2V, I
C
= -50 mA
140
60
hFE
C= -500 mA
Collector output capacitance
Transition frequency
Cob
CB = –10V, I
CE= -10V, I
E
= 0, f = 1MHz
13
pF
f
T
C= -50mA
250
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SB1118-S-HF 2SB1118-T-HF 2SB1118-U-HF
140-280
BA S*
200-400
BA T*
280-560
BA U*
F
F
F
1
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