Datasheet > 2SB1026

2SB1026

更新时间： 2024-11-08 06:23:59

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描述
Silicon PNP Epitaxial

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中文翻译

获取价格

数据手册

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2SB1026 数据手册

SMD Type

Transistors

Silicon PNP Epitaxial

2SB1026

Features

Low frequency power amplifier

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-120

-100

-5

-1

Collector peak current

Collector power dissipation

Junction temperature

i^C(peak)*1

P^C*2

T^j

-2

150

Storage temperature

Tstg

-55 to 150

*1 PW

10 ms, Duty cycle

20%

*2 Value on the alumina ceramic board (12.5X 20X 0.7 mm)

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)CBO

V^(BR)CEO

V^(BR)EBO

I^CBO

Testconditons

Min

Typ

Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

IC = -10 ìA, IE = 0

-120

-100

-5

IC = -1 mA, RBE =

IE = -10 ìA, IC = 0

VCB = -100 V, IE = 0

-10

ìA

V^CE= -5 V, IC = -150mA,

V^CE= -5 V, IC = -500mA

IC = -0.5 A, IB = -50 mA,

VCE = -5 V, IC = -150mA,

V^CE= -5 V, IC = -150 mA

V^CB= -10 V, IE = 0,f = 1 MHz

200

DC current transfer ratio

h^FE

Collector to emitter saturation voltage

Base to emitter voltage

V^CE(sat)

V^BE

-1.0

-0.9

Gain bandwidth product

140

MHz

Collector output capacitance

Cob

hFE Classification

Marking

hFE

60 to 120

100 to 200

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