Datasheet > 2SB1027

2SB1027

更新时间： 2024-11-24 06:23:59

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科信 - KEXIN		/
页数	文件大小	规格书
1页	50K
描述
Silicon PNP Epitaxial

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数据手册

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2SB1027 数据手册

SMD Type

Transistors

Silicon PNP Epitaxial

2SB1027

Features

Low frequency amplifier

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-180

-160

-5

Unit

-1.5

Collector peak current

Collector power dissipation

Junction temperature

i^C(peak)*1

P^C*2

T^j

-3

150

Storage temperature

Tstg

-55 to 150

*1 PW

10 ms, Duty cycle

20%

*2 Value on the alumina ceramic board (12.5X 20X 0.7 mm)

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)CBO

V(BR)CEO

V^(BR)EBO

I^CBO

Testconditons

Min

Typ

Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

IC = -1 mA, IE = 0

-180

-120

-5

IC = -10 mA, RBE =

IE = -1 mA, IC = 0

VCB = -160 V, IE = 0

V^CE= -5 V, IC = -0.15 A,

V^CE= -5 V, IC = -0.5 A,

IC = -0.5 A, IB = -50 mA,

VCE = -5 V, IC = -0.15 A,

-10

ìA

320

DC current transfer ratio

h^FE

Collector to emitter saturation voltage

Base to emitter voltage

V^CE(sat)

V^BE

-1.0

-0.9

hFE Classification

Marking

hFE

60 to 120

100 to 200

160 to 320

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