Datasheet > 2SB1027-J

2SB1027-J

更新时间： 2024-11-25 01:09:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	893K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1027-J 数据手册

SMD Type

Transistors

PNP Transistors

2SB1027

■ Features

1.70 0.1

● Low frequency power amplifier

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-180

-120

-5

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

-1.5

-3

Collector current -Pulse

Collector Power Dissipation

Junction Temperature

(Note.1)

ICP

℃

150

Storage Temperature range

stg

-55 to 150

Note.1: PW ≤ 10ms,Duty cycle≤ 20℅

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-180

-120

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -1mA， I

Ic= -10mA，R^BE=∞

= -1mA， I =0

^CB= -160V , I =0

EB= -5V , I =0

E=0

CBO

EBO

-10

-0.1

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-500m A, I

=-50mA

=-500m A, I

-1.2

-0.9

320

^CE= -5V, I

CE= -5V, I

C= -150 mA

C= -500 mA

DC current gain

hFE

■ Classification of hfe(1)

Type

Range

Marking

2SB1027-H

60-120

2SB1027-J

2SB1027-K

160-320

100-200

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