SMD Type
Transistors
PNP Transistors
2SB1027-HF
■ Features
1.70 0.1
● Low frequency power amplifier
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
-180
-120
-5
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Junction Temperature
I
C
-1.5
-3
A
(Note.1)
ICP
P
C
1
W
℃
T
J
150
Storage Temperature range
T
stg
-55 to 150
Note.1: PW ≤ 10ms,Duty cycle≤ 20℅
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
-180
-120
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= -1mA, I
Ic= -10mA,RBE=∞
= -1mA, I =0
CB= -160V , I =0
EB= -5V , I =0
E=0
I
E
C
I
CBO
EBO
V
V
E
-10
-0.1
-1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=-500m A, I
B
=-50mA
=-50mA
V
C
=-500m A, I
B
-1.2
-0.9
320
V
BE
V
V
V
CE= -5V, I
CE= -5V, I
CE= -5V, I
C= -150 mA
C= -150 mA
C= -500 mA
60
30
DC current gain
hFE
■ Classification of hfe(1)
Type
Range
Marking
2SB1027-H-HF 2SB1027-J-HF 2SB1027-K-HF
60-120 100-200 160-320
EH EJ EK
F
F
F
1
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