Datasheet > 2SB0970R

2SB0970R

更新时间： 2024-11-25 23:20:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	64K
描述
TRANSISTOR \| BJT \| PNP \| 10V V(BR)CEO \| 500MA I(C) \| TO-236AB

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中文翻译

获取价格

数据手册

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2SB0970R 数据手册

Transistor

2SB0970 (2SB970)

Silicon PNP epitaxial planer type

For low-voltage output amplification

Unit: mm

2.8 ⁺^–0⁰^.^.³²

1.5 ⁺^–0⁰^.^.⁰²⁵⁵

0.65 0.15

Features

0.65 0.15

Low collector to emitter saturation voltage V_CE(sat)

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–15

Unit

0.1 to 0.3

0.4 0.2

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–10

–7

–1

1:Base

2:Emitter

JEDEC:TO–236

EIAJ:SC–59

I_C

– 0.5

200

3:Collector

Mini Type Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

Marking symbol : 1R

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CB= –10V, I_E= 0

–100

V_CBO

V_CEO

V_EBO

I_C= –10µA, I_E= 0

I_C= –1mA, I_B= 0

I_E= –10µA, I_C= 0

–15

–10

–7

h_FE1

h_FE2

_CE= –2V, I_C= –0.5A^*2

130

350

Forward current transfer ratio

V_CE= –2V, I_C= –1A^*2

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= –0.4A, I_B= –8mA

– 0.16

– 0.8

130

– 0.3

–1.2

I_C= –0.4A, I_B= –8mA

Transition frequency

f_T

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

130 ~ 220

1RR

180 ~ 350

1RS

Marking Symbol

Note.) The Part number in the Parenthesis shows conventional

part number.

12 3

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