Datasheet > 2SB1000

2SB1000

更新时间： 2024-09-18 06:23:59

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科信 - KEXIN		/
页数	文件大小	规格书
1页	51K
描述
Silicon PNP Epitaxial

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中文翻译

获取价格

数据手册

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2SB1000 数据手册

SMD Type

Transistors

Silicon PNP Epitaxial

2SB1000

Features

Low frequency amplifier.

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-25

-20

-5

-1

-1.5

peak collector current

Collector power dissipation

Junction temperature

I^CP*

P^C

150

Storage temperature

Tstg

-55 to +150

* PW

10 ms; d

0.02.

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)CBOIC = -10 ìA, IE = 0

V^(BR)CEO

Testconditons

Min

-25

-20

-5

Typ

Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

IC = -1 mA, RBE =

V^(BR)EBOIE = -10 ìA, IC = 0

I^CBO

I^EBO

h^FE

VCB = -20 V, IE = 0

VEB = -4 V, IC = 0

-0.1

240

-0.3

ìA

Emitter cutoff current

DC current transfer ratio *

VCE = -2 V, IC = -0.5 A

Collector to emitter saturation voltage *

Base to emitter saturation voltage *

Gain bandwidth product

V^CE(sat)IC = -0.8 A, IB = -0.08 A

V^BE(sat)IC = -0.8 A, IB = -0.08 A

-0.2

-0.94 -1.1

f^T

VCE = -2 V, IC = -0.15 A

200

MHz

Collector output capacitance

C^ob

VCB = -10 V, IE = 0 f=1MHz

hFE Classification

Marking

hFE

85 170

120 240

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