Datasheet > 2SB0976R

2SB0976R

更新时间： 2024-09-17 23:20:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	63K
描述
TRANSISTOR \| BJT \| PNP \| 18V V(BR)CEO \| 5A I(C) \| TO-92

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中文翻译

获取价格

数据手册

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2SB0976R 数据手册

Transistor

2SB0976 (2SB976)

Silicon PNP epitaxial planer type

For low-frequency output amplification

For DC-DC converter

Unit: mm

4.0 0.2

5.0 0.2

For stroboscope

Features

Low collector to emitter saturation voltage V_CE(sat)

Large collector current I_C.

Absolute Maximum Ratings (Ta=25˚C)

0.45–⁺0⁰.^.1²

0.45⁺^–0⁰^.^.¹²

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–27

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1.27

–18

–7

1 2 3

1:Emitter

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

–8

I_C

–5

2.54 0.15

Collector power dissipation

Junction temperature

Storage temperature

P_C

0.75

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–100

–1

Unit

Collector cutoff current

Emitter cutoff current

V_CB= –10V, I_E= 0

V_EB= –5V, I_C= 0

µA

I_EBO

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

V_CEO

V_EBO

_C= –1mA, I_B= 0

–18

–7

I_E= –10µA, I_C= 0

V_CE= –2V, I_C= –2A^*2

h_FE

125

625

–1

Collector to emitter saturation voltage V_CE(sat)

I_C= –3A, I_B= –0.1A^*2

– 0.4

120

MHz

Transition frequency

f_T

V_CB= –6V, I_E= 50mA, f = 200MHz

V_CB= –20V, I_E= 0, f = 1MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

Rank

h_FE

125 ~ 205

180 ~ 625

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

中文翻译

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