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2SA812 PDF预览

2SA812

更新时间: 2024-11-06 07:29:55
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科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
2页 123K
描述
PNP Silicon Epitaxial Transistor

2SA812 数据手册

 浏览型号2SA812的Datasheet PDF文件第2页 
SMD Type  
Transistors  
PNP Silicon Epitaxial Transistor  
2SA812  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA)  
High Voltage: VCEO = -50 V  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector to base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-60  
Unit  
V
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
power dissipation  
-50  
V
-5.0  
V
-100  
mA  
mW  
PC  
200  
Junction temperature  
Storage temperature range  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain *  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
200  
Max  
-0.1  
-0.1  
600  
Unit  
A
VCB = -60 V, IE = 0 A  
IEBO  
VEB = -5.0 V, IC = 0 A  
VCE = -6.0 V, IC = -1.0 mA  
A
hFE  
90  
Collector saturation voltage  
Base to emitter voltage  
Output capacitance  
VCE(sat) IC = -100 mA, IB = -10 mA  
-0.18 -0.3  
V
V
VBE  
Cob  
fT  
VCE = 6.0 V, IC = -1.0 mA  
-0.58 -0.62 -0.68  
VCE = -10 V, IE = 0 A, f = 1.0 MHz  
VCE = -6.0 V, IE = 10 mA  
4.5  
pF  
Transition frequency  
180  
MHz  
* Pulsed: PW  
350 s, Duty Cycle  
2%  
hFE Classification  
Marking  
hFE  
M4  
90 180  
M5  
M6  
200 400  
M7  
135 270  
300 600  
1
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