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2SA2154CT-GR PDF预览

2SA2154CT-GR

更新时间: 2024-01-07 15:36:09
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器PC
页数 文件大小 规格书
3页 136K
描述
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP General Purpose Small Signal

2SA2154CT-GR 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code:unknown风险等级:5.66
Is Samacsys:N最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

2SA2154CT-GR 数据手册

 浏览型号2SA2154CT-GR的Datasheet PDF文件第2页浏览型号2SA2154CT-GR的Datasheet PDF文件第3页 
2SA2154  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
2SA2154  
General-Purpose Amplifier Applications  
Unit: mm  
High voltage and high current  
: VCEO = 50 V, IC = 100 mA (max)  
Excellent h linearity  
FE  
: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.)  
FE  
C
FE  
C
1
2
High h  
FE  
h
FE  
= 120~400  
:
3
Complementary to 2SC6026  
Lead (Pb) free  
0.8±0.05  
1.0±0.05  
0.1±0.05  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
0.1±0.05  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
1.BASE  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
2.EMITTER  
3.COLLECTOR  
fSM  
5  
V
I
100  
30  
mA  
mA  
mW  
°C  
°C  
C
JEDEC  
JEITA  
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
50  
C
TOSHIBA  
2-1E1A  
T
j
150  
T
stg  
55~150  
Weight: 0.0006 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Collector cutoff current  
Symbol  
Test Condition  
E
Min  
Typ.  
Max  
Unit  
I
I
V
V
V
= −50 V, I = 0  
0.1  
µA  
µA  
CBO  
CB  
Emitter cutoff current  
= −5 V, I = 0  
120  
0.1  
400  
0.3  
EBO  
EB  
CE  
C
DC current gain  
h
(Note)  
= −6 V, I = −2 mA  
FE  
C
Collector-emitter saturation voltage  
Transition frequency  
V
I
C
= −100 mA, I = −10 mA  
0.18  
V
CE (sat)  
B
f
V
CE  
V
CB  
= −10 V, I = −1 mA  
80  
MHz  
pF  
T
C
Collector output capacitance  
C
ob  
= −10 V, I = 0, f = 1 MHz  
1.6  
E
Note: h classification Y (F): 120~240, GR (H): 200~400  
FE  
(
) marking symbol  
Marking  
Type Name  
Rank  
h
FE  
8F  
1
2005-03-23  

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