Datasheet > 2SA2154CT-GR,L3F(B

2SA2154CT-GR,L3F(B

更新时间： 2024-02-26 08:40:09

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	183K
描述
Small Signal Bipolar Transistor

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2SA2154CT-GR,L3F(B 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	1.5
Base Number Matches：	1

2SA2154CT-GR,L3F(B 数据手册

2SA2154CT

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA2154CT

General Purpose Amplifier Applications

•

High voltage and high current : V_CEO= −50V, I_C= −100mA (max)

Unit: mm

•

Excellent h linearity

: h (I = −0.1 mA) / h (I = −2 mA)= 0.95 (typ.)

•

High h

= 120 to 400

Complementary to 2SC6026CT

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

−100

−30

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

100*

1.BASE

150

2.EMITTER

3.COLLECTOR

stg

−55 to 150

CST3

* : Mounted on FR4 board (10 mm × 10 mm × 1 mmt)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= −50 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

⎯

−0.1

μA

CBO

Emitter cut-off current

= −5 V, I = 0

⎯

120

⎯

−0.1

400

−0.3

⎯

μA

⎯

EBO

DC current gain

(Note)

= −6 V, I = −2 mA

Collector-emitter saturation voltage

Transition frequency

= −100 mA, I = −10 mA

−0.18

⎯

CE (sat)

= −10 V, I = −1 mA

MHz

Collector output capacitance

= −10 V, I = 0, f = 1 MHz

⎯

1.6

⎯

Note:

h classification Y (F): 120 to 240, GR (H): 200 to 400

(

) marking symbol

Marking

Type Name

Rank

Start of commercial production

2004-08

2014-03-01

12 3

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