Datasheet > 2SA1924_06

2SA1924_06

更新时间： 2024-11-18 12:50:03

品牌	Logo	应用领域
东芝 - TOSHIBA		开关高压
页数	文件大小	规格书
4页	159K
描述
High-Voltage Switching Applications

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2SA1924_06 数据手册

2SA1924

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SA1924

High-Voltage Switching Applications

Unit: mm

•

High breakdown voltage: V

= −400 V

CEO

Low saturation voltage: V

= −1 V (max)

CE (sat)

(I = −100 mA, I = −10 mA)

•

Collector metal (fin) is fully covered with mold resin.

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−400

−7

Collector-emitter voltage

Emitter-base voltage

−0.5

−1

Collector current

Base current

Pulse

−0.25

1.5

Ta = 25°C

Tc = 25°C

JEDEC

JEITA

―

Collector power

dissipation

Junction temperature

150

°C

TOSHIBA

2-8H1A

Storage temperature range

stg

−55 to 150

Weight: 0.82 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-09

12 3 4

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