Datasheet > 2SA1925_10

2SA1925_10

更新时间： 2024-11-18 07:29:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关高压
页数	文件大小	规格书
4页	173K
描述
High-Voltage Switching Applications

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2SA1925_10 数据手册

2SA1925

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SA1925

High-Voltage Switching Applications

Unit: mm

•

High breakdown voltage: V

= −400 V

CEO

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−400

−7

Collector-emitter voltage

Emitter-base voltage

−0.5

Collector current

Pulse

−1

Base current

−0.25

1.3

Collector power dissipation

Junction temperature

°C

JEDEC

JEITA

―

150

Storage temperature range

stg

−55 to 150

TOSHIBA

2-8M1A

Note 1: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

Weight: 0.55 g (typ.)

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-03-09

12 3 4

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