Datasheet > 2SA1926_10

2SA1926_10

更新时间： 2024-11-18 07:29:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关放大器电源开关功率放大器
页数	文件大小	规格书
3页	101K
描述
Power Amplifier Applications Power Switching Applications

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2SA1926_10 数据手册

2SA1926

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1926

Power Amplifier Applications

Power Switching Applications

Unit: mm

•

Low collector saturation voltage:

= −0.17 V (max)

CE (sat)

(I = −1 A)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−80

Collector-emitter voltage

Emitter-base voltage

Collector current

−8

−3

Base current

−1

Collector power dissipation

Junction temperature

Storage temperature range

1000

150

°C

JEDEC

JEITA

―

stg

−55 to 150

TOSHIBA

2-7D101A

Note 1: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

Weight: 0.2 g (typ.)

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-03-09

12 3

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