2SA1893-O

更新时间： 2024-11-24 13:04:11

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体放大器晶体管功率双极晶体管功率放大器闪光灯
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数据手册

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2SA1893-O 数据手册

2SA1893

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1893

Strobe Flash Applications

Unit: mm

Audio Power Amplifier Applications

•

= 100 to 320 (V

= −2 V, I = −0.5 A)

FE(1)

FE(2)

CE C

= 70 (min) (V

= −2 V, I = −4 A)

Low saturation voltage: V

= −1.0 V (max)

CE (sat)

(I = −4 V, I = −0.1 A)

•

High-power dissipation: P = 1.3 W

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−35

−20

−8

Collector-emitter voltage

Emitter-base voltage

−5

JEDEC

JEITA

―

Collector current

Pulsed

−8

(Note 1)

Base current

−0.5

1.3

TOSHIBA

2-8M1A

Collector power dissipation

Junction temperature

°C

Weight: 0.55 g (typ.)

150

Storage temperature range

stg

−55 to 150

Note 1: Conditions: Pulse width = 10 ms (max), duty cycle = 30% (max)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2006-11-09

12 3 4 5

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