Datasheet > 2SA1898-S

2SA1898-S

更新时间： 2024-11-28 01:12:11

品牌	Logo	应用领域
科信 - KEXIN		开关晶体管
页数	文件大小	规格书
3页	1168K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1898-S 数据手册

SMD Type

Transistors

PNP Transistors

2SA1898

1.70 0.1

■ Features

● Large current capacity.

● Low collector-to-emitter saturation voltage.

● Fast switching speed.

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

-15

-5

Unit

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

VCBO

VCEO

VEBO

Collector Current - Continuous

Colletor Current - Pulse

Base Current

-3

-5

-0.6

1.3

150

Collector Power Dissipation

Junction Temperature

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-15

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA，RBE= ∞

= -100μA， I =0

CB= -12 V , I =0

EB= -3V , I =0

E=0

CBO

EBO

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-1.5A, I

=-75mA

-0.25 -0.5

-0.95 -1.2

280

=-1.5A, I

CE= -2V, I

= -500mA

100

DC current gain

hFE

C= -3A

Turn-ON Time

stg

off

100

120

See specified Test Circuit.

Storage Time

200

220

Turn-OFF Time

Collector output capacitance

Transition frequency

^CB= -10V, I

E= 0,f=1MHz

^CE= -2V, I = -0.3A

300

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SA1898-R

100-200

ANR

2SA1898-S

140-280

ANS

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中文翻译

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