Datasheet > 2SA1900

2SA1900

更新时间： 2024-11-27 06:23:59

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	50K
描述
Medium power transistor

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中文翻译

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数据手册

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2SA1900 数据手册

SMD Type

TransistIoCrs

Medium power transistor

2SA1900

Features

Low saturation voltage, typically VCE(sat) = ?0.15V at IC /

I^B= ?500mA / ?50mA

PC=2W (on 40X40X0.7mm ceramic board)

Absolute Maximum Ratings Ta = 25

Parameter

Collector-emitter Voltage

Symbol

Rating

Unit

V^CEO

V^CBO

V^EBO

-60

Collector-base Voltage

Emitter-base Voltage

-50

-5

-1

A(Pulse) *1

Collector current

I^C

-2

0.5

Collector power dissipation

W *2

Jumction temperature

Storage temperature

T^j

150

Tstg

-55 to +150

*1 Single pulse Pw=20ms, Duty=1/2

*2 When mounted on a 40X40X0.7mm seramic board.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-60

-50

-5

Typ

Max

Unit

Collector-base breakdown voltae

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBOIC = -50µA

BV^CEOIC = -1mA

BV^EBOIE = -50µA

I^CBO

I^EBO

VCB = -40V

VEB = -4V

-0.1

-0.4

270

ìA

Emitter cutoff current

Collector-Emitter Saturation Voltage

DC current transfer ratio

V^CE(sat)IC/IB = -500mA/-50mA

h^FEVCE/IC = -3V/-0.5A

f^T

120

Transition frequency

VCE = -5V , IE = 50mA , f=100MHz

VCB = -10V , IE = 0A , f=1MHz

150

MHz

Output Capacitance

C^ob

Marking

ALQ

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与2SA1900相关器件

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2SA1900P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 2A I(C) \| SC-62
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2SA1900R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 2A I(C) \| SC-62
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2SA1900T100/PQ	ROHM	获取价格	1A, 50V, PNP, Si, POWER TRANSISTOR
2SA1900T100/PR	ROHM	获取价格	1A, 50V, PNP, Si, POWER TRANSISTOR
2SA1900T100/Q	ROHM	获取价格	1A, 50V, PNP, Si, POWER TRANSISTOR
2SA1900T100/QR	ROHM	获取价格	1A, 50V, PNP, Si, POWER TRANSISTOR
2SA1900T100/R	ROHM	获取价格	1A, 50V, PNP, Si, POWER TRANSISTOR
2SA1900T100P	ROHM	获取价格	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,